BUX46 Ver la hoja de datos (PDF) - Inchange Semiconductor

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BUX46

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

BUX46/A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

BUX46

400

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

IC= 0.2A ; IB= 0; L= 25mH

V

BUX46A

450

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 0.5A ; IC= 0

30

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.7A

5

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A

1.5 V

VBE(sat) Base-Emitter Saturation Voltage

ICER

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 2.5A; IB= 0.5A

VCE=VCESmax;RBE≤10Ω

VCE=VCESmax;RBE≤10Ω;TJ=124℃

VCE=VCESmax;VBE=-2.5V

VCE=VCESmax;VBE=-2.5V;TJ=124℃

VEB= 5V; IC= 0

1.3 V

0.3

2

mA

0.1

1

mA

1 mA

hFE

DC Current Gain

IC= 1A ; VCE= 5V

15

50

Switching Times , Resistive Load

ton

Turn-On Time

tstg

Storage Time

tf

Fall Time

IC= 2.5A ;IB1= -IB2= 0.5A

0.5 1.0 μs

1.5 3.0 μs

0.5 0.8 μs

isc Website：www.iscsemi.cn

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