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CM1200E4C-34N

HIGH POWER SWITCHING USE INSULATED TYPE

Mitsumi 

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200E4C-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

THERMAL CHARACTERISTICS

Symbol

Item

Rth(j-c)Q

Rth(j-c)R

Thermal resistance

Rth(c-f)

Contact thermal resistance

Conditions

Junction to Case, IGBT part

Junction to Case, FWDi part

Junction to Case, Clamp-Di part

Case to Fin, λgrease = 1W/m·K

Limits

Unit

Min

Typ

Max

—

—

19.0 K/kW

—

—

42.0

—

—

K/kW

42.0

—

16.0

— K/kW

MECHANICAL CHARACTERISTICS

Symbol

Item

Conditions

M

—

CTI

da

ds

LC-E(int)

RC-E(int)

Mounting torque

Mass

Comparative tracking index

Clearance distance in air

Creepage distance along surface

Internal inductance

Internal lead resistance

M8 : Main terminals screw

M6 : Mounting screw

M4 : Auxiliary terminals screw

IGBT part

TC = 25°C

Limits

Unit

Min

Typ

Max

7.0

—

20.0

3.0

—

6.0 N·m

1.0

—

3.0

—

0.8

—

kg

600

—

—

—

19.5

—

—

mm

32.0

—

—

mm

—

30

—

nH

—

0.28

—

mΩ

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

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