CPV364M4K Ver la hoja de datos (PDF) - International Rectifier
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CPV364M4K Datasheet PDF : 10 Pages
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CPV364M4K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min.
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
11
Zero Gate Voltage Collector Current –––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ. Max. Units
––– ––– V
0.63 ––– V/°C
1.80 2.3
1.80 ––– V
1.56 –––
––– 6.0
-13 ––– mV/°C
18 ––– S
––– 250 µA
––– 3500
1.3 1.7 V
1.2 1.6
––– ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 13A
VGE = 15V
IC = 24A
See Fig. 2, 5
IC = 13A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 10A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 110 170
IC = 13A
— 14 21 nC VCC = 400V
— 49 74
VGE = 15V
See Fig.8
— 50 —
— 30 — ns TJ = 25°C
— 110 170
IC = 13A, VCC = 480V
— 91 140
VGE = 15V, RG = 10Ω
— 0.56 —
Energy losses include "tail"
— 0.28 — mJ and diode reverse recovery
— 0.84 1.1
See Fig. 9,10, 18
10 — —
— 47 —
— 30 —
— 250 —
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
TJ = 150°C,
See Fig. 11,18
ns IC = 13A, VCC = 480V
VGE = 15V, RG = 10Ω
— 150 —
Energy losses include "tail"
— 1.28 — mJ and diode reverse recovery
— 7.5 — nH Measured 5mm from package
— 1600 —
VGE = 0V
— 130 — pF VCC = 30V
See Fig. 7
— 55 —
ƒ = 1.0MHz
— 42 60 ns TJ = 25°C See Fig.
— 74 120
TJ = 125°C 14
— 4.0 6.0 A TJ = 25°C See Fig.
IF = 15A
— 6.5 10
TJ = 125°C 15
VR = 200V
— 80 180 nC TJ = 25°C See Fig.
— 220 600
TJ = 125°C
16 di/dt = 200Aµs
— 188 — A/µs TJ = 25°C See Fig.
— 160 —
TJ = 125°C 17
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