CPV364M4K Ver la hoja de datos (PDF) - International Rectifier

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CPV364M4K

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

3000

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

2500

Cres = Cgc

Coes = Cce + Cgc

2000

Cies

1500

1000

500

0

1

Coes

Cres

10

100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

CPV364M4K

20 VCC = 400V

I C = 13A

16

12

8

4

0

0

20

40

60

80

100 120

Q G, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

1.5

VCC = 480V

VGE = 15V

TJ = 25 °C

IC = 13A

1.0

10 RG = O10hΩm

VGE = 15V

VCC = 480V

1

IC = 26A

IC = 13A

IC = 6.5A

0.5

0

10

20

30

40

50

RGR,GG, aGteatRe eRseisstiastnacnece(O(hΩm))

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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