DIM200PHM33-F000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM200PHM33-F000 Datasheet PDF : 8 Pages
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DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
EON Turn-on energy loss
Qrr Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec Diode reverse recovery energy
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
Cge = 56nF
LS ~ 100nH
RG(ON) = 16.5
RG(OFF) = 16.5
RG(ON) = 7.5,
RG(OFF) = 16.5
IF = 200A
VCE = 1800V
dIF/dt = 1600A/μs
Min Typ. Max Units
1.95
μs
170
ns
220
mJ
1180
ns
225
ns
290
mJ
80
μC
144
A
75
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
EON Turn-on energy loss
Qrr Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec Diode reverse recovery energy
Test Conditions
IC = 200A
VGE = ±15V
VCE = 1800V
Cge = 56nF
LS ~ 100nH
RG(ON) = 16.5
RG(OFF) = 16.5
RG(ON) = 7.5,
RG(OFF) = 16.5
IF = 200A
VCE = 1800V
dIF/dt = 1600A/μs
Min Typ. Max Units
2.2
μs
190
ns
265
mJ
1150
ns
280
ns
390
mJ
125
μC
155
A
130
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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