DIM200PHM33-F000 Ver la hoja de datos (PDF) - Dynex Semiconductor

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DIM200PHM33-F000

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-F000

Fig. 7 Diode typical forward characteristics

Fig. 8 Reverse bias safe operating area

Fig. 9 Diode reverse bias safe operating area

Fig. 10 Transient thermal impedance

6/8

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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