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RMWB04001 Datasheet PDF : 5 Pages
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RMWB04001
4 GHz Buffer Amplifier MMIC
ADVANCED INFORMATION
Description
The RMWB04001 is a 2-stage GaAs MMIC amplifier designed as a 3.5 to 4 GHz Buffer Amplifier for use in the LO
chain of millimeter wave point to point radios, point to multi-point communications, LMDS, and similar
applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23
and 26 GHz transmit/receive chipset. The RMWB04001 utilizes Raytheon’s 0.25µm power PHEMT process and can
be used in a variety of applications requiring a high gain medium power amplifier.
Features
4 mil substrate
Small-signal gain 27 dB (typ.)
Saturated power out 20 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.4 mm x 1.3 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
Rjc
Value
+6
-2
8
168
+7
-30 to +85
-55 to +125
140
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C),50 Ω
system, Vd=+4 V,
Quiescent Current
Idq=36 mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)1
Gain (Small Signal at Pin= -12 dBm)
Gain Variation Vs. Frequency
Power Output Saturated: (Pin=-2 dBm)
Input Return Loss (Pin=-12 dBm)
Output Return Loss (Pin=-12 dBm)
DC detector voltage at Pout=20 dBm
Min Typ Max Unit
3.5
4.0 GHz
-0.7
V
24 27
dB
0.5
dB
18 20
dBm
-14
dB
-12
dB
0.5
V
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
www.raytheon.com/micro
Note: 1. Typical range of gate voltage is -1 to -0.4 V to set Idq of 36 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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