RMWB04001 Ver la hoja de datos (PDF) - Raytheon Company
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RMWB04001 Datasheet PDF : 5 Pages
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RMWB04001
4 GHz Buffer Amplifier MMIC
Recommended
Procedure
for Biasing and
Operation
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=36 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power
(ii) Turn down and off drain voltage (Vd)
(iii) Turn down and off gate bias voltage (Vg)
Functional
Block Diagram
Drain Supply Drain Supply
Output Power
Vd1
Vd2
Detector Voltage Vdet
RF IN
MMIC Chip
RF OUT
Ground
(Back of Chip)
Gate Supply
Vg
Note:Detector delivers > 0.1V DC into 3kΩ load resistor for >20 dBm output power. If output power level detection is not desired, do not connect
to detector bond pad.
Figure 1 Dimensions in mm
Chip Layout and
Bond Pad Locations
0.00
0.57
Chip Size is 2.40 mm
x 1.30 mm. X 100 µm.
1.30
Back of chip is RF
1.19
and DC ground
1.32
2.08 2.28 2.40
1.30
1.19
0.57
www.raytheon.com/micro
0.11
0.00
0.00 0.11
1.14
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 2
0.57
0.11
0.00
2.28 2.40
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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