RMWB04001 Ver la hoja de datos (PDF) - Raytheon Company
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RMWB04001 Datasheet PDF : 5 Pages
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RMWB04001
4 GHz Buffer Amplifier MMIC
Performance
Data
ADVANCED INFORMATION
Typical Small Signal Performance
On-Wafer Measurements, Vd=4 V, Idq= 36 mA, T=25 °C
28
27
26
25
24
23
22
3.5
S21
S22
S11
3.6
3.7
3.8
3.9
Frequency (GHz)
0
-5
-10
-15
-20
-25
-30
4
30
25
20
15
10
5
0
0
S21
S22
S11
1
2
3
4
5
Frequency (GHz)
0
-5
-10
-15
-20
-25
-30
6
Power Output and Gain Vs. Power In
50 Ω Fixture Measurements, Vd=4 V, Idq= 36 mA, T=25 °C
22
29
20
28
18
27
4.0 GHz
16
26
14
25
3.5 GHz
12
24
10
23
8
22
-16 -14 -12 -10 -8
-6
-4
-2
Pin (dBm )
www.raytheon.com/micro
Power Output and Gain at 3 dB Compression Vs. Frequency and Temperature
50 Ω Fixture Measurements, Vd=4 V, Idq= 36 mA
20.2
23.6
20.1
P3dB (T=25
ºC)
G3dB
(T=25 ºC)
23.2
20.0
P3dB (T=75 ºC)
19.9
G3dB
(T=75 ºC)
22.8
22.4
19.8
3.5
3.6
3.7
3.8
3.9
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 4
22.0
4.0
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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