FGP20N60UFDTU Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGP20N60UFDTU Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGP20N60UFD FGP20N60UFDTU
Package
TO-220
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
600
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V, TC = 25oC
-
VCE = VCES, VGE = 0V,
-
TC = 125oC
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
4.0
IC = 20A, VGE = 15V
-
VCE(sat)
Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V,
TC = 125oC
-
Dynamic Characteristics
Cies
Input Capacitance
-
Coes
Output Capacitance
VCE = 30V, VGE = 0V,
-
f = 1MHz
Cres
Reverse Transfer Capacitance
-
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
-
-
VCC = 400V, IC = 20A,
-
RG = 10Ω, VGE = 15V,
-
Inductive Load, TC = 25oC
-
-
-
-
-
VCC = 400V, IC = 20A,
-
RG = 10Ω, VGE = 15V,
-
Inductive Load, TC = 125oC
-
-
-
-
VCE = 400V, IC = 20A,
-
VGE = 15V
-
-
-
V
0.6
-
V/oC
-
250
µA
-
1
mA
-
±400
nA
5.0
6.5
V
1.8
2.4
V
2.0
-
V
940
-
pF
110
-
pF
40
-
pF
13
-
ns
17
-
ns
87
-
ns
32
64
ns
0.38
-
mJ
0.26
-
mJ
0.64
-
mJ
13
-
ns
16
-
ns
92
-
ns
63
-
ns
0.41
-
mJ
0.36
-
mJ
0.77
-
mJ
63
-
nC
7
-
nC
32
-
nC
FGP20N60UFD Rev. A
2
www.fairchildsemi.com
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