FGP20N60UFDTU Ver la hoja de datos (PDF) - Fairchild Semiconductor

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FGP20N60UFDTU

600V, 20A Field Stop IGBT

Fairchild Semiconductor 

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 10A

TC = 25oC

TC = 125oC

trr

Qrr

Diode Reverse Recovery Time

IES =10A, dIES/dt = 200A/µs

Diode Reverse Recovery Charge

TC = 25oC

TC = 125oC

TC = 25oC

TC = 125oC

Min.

-

-

-

-

-

-

Typ.

1.9

1.7

35

57

41

96

Max

2.5

-

-

-

-

-

Units

V

ns

nC

FGP20N60UFD Rev. A

3

www.fairchildsemi.com

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