GA200SA60U Ver la hoja de datos (PDF) - International Rectifier

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GA200SA60U

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

PD -50066A

INSULATED GATE BIPOLAR TRANSISTOR

GA200SA60U

Ultra-FastTM Speed IGBT

Features

• UltraFast: Optimized for minimum saturation voltage

and operating frequencies up to 40 kHz in hard

switching, > 200 kHz in resonant mode

• Very low conduction and switching losses

• Fully isolate package ( 2,500 Volt AC/RMS)

• Very low internal inductance ( ≤ 5 nH typ.)

• Industry standard outline

C

G

E

n-channel

VCES = 600V

VCE(on) typ. = 1.60V

@VGE = 15V, IC = 100A

Benefits

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, Welding, Induction heating

• Lower overall losses available at frequencies ≥ 20kHz

• Easy to assemble and parallel

• Direct mounting to heatsink

• Lower EMI, requires less snubbing

• Plug-in compatible with other SOT-227 packages

Absolute Maximum Ratings

VCES

IC @ TC = 25°C

IC @ TC = 100°C

ICM

ILM

VGE

EARV

VISOL

PD @ TC = 25°C

PD @ TC = 100°C

TJ

TSTG

Parameter

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load CurrentR

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy S

RMS Isolation Voltage, Any Terminal to Case, t=1 min

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction

Storage Temperature Range

Mounting Torque, 6-32 or M3 Screw

S O T -2 2 7

Max.

600

200

100

400

400

± 20

160

2500

500

200

-55 to + 150

-55 to + 150

12 lbf •in(1.3N•m)

Units

V

A

V

mJ

V

W

°C

Thermal Resistance

RθJC

RθCS

Wt

www.irf.com

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Weight of Module

Typ.

–––

0.05

30

Max.

0.25

–––

–––

Units

°C/W

gm

1

4/24/2000

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