GA200SA60U Ver la hoja de datos (PDF) - International Rectifier
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GA200SA60U Datasheet PDF : 8 Pages
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GA200SA60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage — 0.38 —
— 1.60 1.9
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 10 mA
IC = 100A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance U
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
— 1.92 —
V
IC = 200A
See Fig.2, 5
— 1.54 —
IC = 100A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 2.0 mA
79
— S VCE = 100V, IC = 100A
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±250 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 770 1200
IC = 100A
— 100 150 nC VCC = 400V
See Fig. 8
— 260 380
VGE = 15V
— 54 —
— 79 — ns TJ = 25°C
— 130 200
IC = 100A, VCC = 480V
— 300 450
VGE = 15V, RG = 2.0Ω
— 0.98 —
Energy losses include "tail"
— 3.48 — mJ See Fig. 9, 10, 14
— 4.46 7.6
— 56 —
TJ = 150°C,
— 75 —
— 160 —
ns IC = 100A, VCC = 480V
VGE = 15V, RG = 2.0Ω
— 460 —
Energy losses include "tail"
— 7.24 — mJ See Fig. 10, 11, 14
— 5.0 — nH Measured 5mm from package
— 16500 —
VGE = 0V
— 1000 — pF VCC = 30V
See Fig. 7
— 200 —
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 2.0Ω,
(See fig. 13a)
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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