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GS71108AJ

128K x 8 1Mb Asynchronous SRAM

Unspecified 

GS71108ATP/J/SJ/U

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

–0.5 to +4.6

V

Input Voltage

Output Voltage

VIN

–0.5 to VDD +0.5

V

(≤ 4.6 V max.)

VOUT

–0.5 to VDD +0.5

(≤ 4.6 V max.)

V

Allowable power dissipation

PD

0.7

W

Storage temperature

TSTG

–55 to 150

oC

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-

ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device

reliability.

Recommended Operating Conditions

Parameter

Symbol Min

Supply Voltage for -7/-8/-10/-12

VDD

3.0

Input High Voltage

Input Low Voltage

VIH

2.0

VIL

–0.3

Ambient Temperature,

Commercial Range

TAc

0

Ambient Temperature,

Industrial Range

TAI

–40

Typ

Max

Unit

3.3

3.6

V

—

VDD +0.3

V

—

0.8

V

—

70

oC

—

85

oC

Notes:

1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Rev: 1.04a 10/2002

3/14

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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