GS71116AJ Ver la hoja de datos (PDF) - Unspecified

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GS71116AJ

64K x 16 1Mb Asynchronous SRAM

Unspecified 

GS71116ATP/J/U

Recommended Operating Conditions

Parameter

Symbol Min

Typ

Supply Voltage for -7/-8/-10/-12

VDD

3.0

3.3

Input High Voltage

VIH

2.0

—

Input Low Voltage

VIL

–0.3

—

Ambient Temperature,

Commercial Range

TAc

0

—

Ambient Temperature,

Industrial Range

TAI

–40

—

Notes:

1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Max

3.6

VDD +0.3

0.8

70

85

Capacitance

Parameter

Input Capacitance

Output Capacitance

Symbol

Test Condition

Max

CIN

VIN = 0 V

5

COUT

VOUT = 0 V

7

Notes:

1. Tested at TA = 25°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested.

DC I/O Pin Characteristics

Parameter

Symbol

Input Leakage Current

IIL

Output Leakage

Current

ILO

Output High Voltage

VOH

Output Low Voltage

VOL

Test Conditions

VIN = 0 to VDD

Output High Z

VOUT = 0 to VDD

IOH = –4 mA

ILO = +4 mA

Min

–1 uA

–1 uA

2.4

Unit

V

V

V

oC

oC

Unit

pF

pF

Max

1uA

1uA

0.4V

Rev: 1.04a 10/2002

4/15

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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