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IDT70261SL Ver la hoja de datos (PDF) - Integrated Device Technology

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componentes Descripción
Lista de partido
IDT70261SL
IDT
Integrated Device Technology IDT
IDT70261SL Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
Waveform of Read Cycles(5)
tRC
ADDR
tAA (4)
CE
tACE (4)
tAOE (4)
OE
UB, LB
tABE (4)
Industrial and Commercial Temperature Ranges
R/W
DATAOUT
BUSYOUT
tLZ (1)
VALID DATA(4)
tBDD (3, 4)
tOH
tHZ (2)
3039 drw 05
NOTES:
1. Timing depends on which signal is asserted last, OE, CE, LB, or UB.
2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB.
3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY
has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD.
5. SEM = VIH.
Timing of Power-Up Power-Down
CE
tPU
ICC
50%
ISB
tPD
50%
,
3039 drw 06
6.742

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