IKB03N120H2 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

IKB03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKP03N120H2,

IKW03N120H2

IKB03N120H2

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction - case

Thermal resistance,

junction – ambient

SMD version, device on PCB1)

Symbol

Conditions

RthJC

RthJCD

RthJA

RthJA

P-TO-220-3-1

P-TO-247-3-1

P-TO-263 (D2PAK)

Max. Value

Unit

2.0

K/W

3.2

62

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

V(BR)CES

VCE(sat)

VGE=0V, IC=300µA

VGE = 15V, IC=3A

Tj=25°C

Tj=150°C

VGE = 10V, IC=3A,

Tj=25°C

Diode forward voltage

VF

VGE = 0, IF=2A

Tj=25°C

Tj=150°C

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Dynamic Characteristic

VGE(th)

ICES

IGES

gfs

IC=90µA,VCE=VGE

VCE=1200V,VGE=0V

Tj=25°C

Tj=150°C

VCE=0V,VGE=20V

VCE=20V, IC=3A

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Ciss

Coss

Crss

QGate

Internal emitter inductance

LE

measured 5mm (0.197 in.) from case

VCE=25V,

VGE=0V,

f=1MHz

VCC=960V, IC=3A

VGE=15V

P-TO-220-3-1

P-TO-247-3-1

min.

1200

-

-

-

-

-

2.1

-

-

-

-

-

-

-

-

-

Value

Unit

Typ. max.

-

-V

2.2

2.8

2.5

-

2.4

-

2.0

2.5

1.75

-

3

3.9

µA

-

20

-

80

-

100 nA

2

-S

205

- pF

24

-

7

-

22

- nC

7

- nH

13

1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

Power Semiconductors

2

Rev. 2, Mar-04

Share Link: