K15T1202 Ver la hoja de datos (PDF) - Infineon Technologies

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K15T1202

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

7.5mJ

*) Eon and Etsinclude losses

due to diode recovery

Ets*

5.0mJ

2.5mJ

Eon*

Eoff

0.0mJ

7.5A

15.0A

22.5A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=41.8Ω,

Dynamic test circuit in Figure E)

5.00 mJ

*) Eon and Ets include losses

due to diode recovery

Ets*

3.75 mJ

2.50 mJ

Eon*

1.25 mJ

Eoff

0.00 mJ

10Ω 30Ω 50Ω 70Ω 90Ω 110Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

*) Eon and Ets include losses

due to diode recovery

2.4mJ

5.00mJ

Ets*

Ets*

3.75mJ

Eon*

Eon*

1.2mJ

2.50mJ

Eoff

Eoff

1.25mJ

0.0mJ

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=15A, RG=41.8Ω,

Dynamic test circuit in Figure E)

0.00mJ

400V

500V

600V

700V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ=175°C,

VGE=0/15V, IC=15A, RG=41.8Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

8

Rev. 2.1 Sep 08

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