K15T1202 Ver la hoja de datos (PDF) - Infineon Technologies

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K15T1202

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

15V

240V

960V

10V

5V

0V

0nC

25nC

50nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=15 A)

75nC

1nF

Ciss

100pF

Coss

Crss

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

15µs

10µs

5µs

0µs

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ≤175°C)

100A

75A

50A

25A

0A

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 600V, Tj,start =175°C)

Power Semiconductors

9

Rev. 2.1 Sep 08

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