IR062HD4C10U-P2 Ver la hoja de datos (PDF) - International Rectifier

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IR062HD4C10U-P2

HIGH VOLTAGE HALF BRIDGE

International Rectifier 

Preliminary Data Sheet No. PD60171-D

IR062HD4C10U-P2

IR082HD4C10U-P2

HIGH VOLTAGE HALF BRIDGE

Features

• Output Power IGBT’s in half-bridge configuration

• 575V rated breakdown voltage

• High side gate drive designed for bootstrap

operation

• Matched propagation delay for both channels

• Independent high and low side output channels

(IR062HD4C10U-P2) or cross-conduction

prevention logic (IR082HD4C10U-P2)

• Undervoltage lockout

• 3.3V, 5V and 15V input logic compatible

• Metal heatsink back for improved PD

Description

The IR062HD4C10U-P2 / IR082HD4C10U-P2 are

high voltage, high speed half bridges. Proprietary

HVIC and latch immune CMOS technologies,

along with the power IGBT technology, enable

ruggedized single package construction. The

logic inputs are compatible with standard CMOS

or LSTTL outputs, down to 3.3V logic. The front-

end features an independent high and low side

driver in phase with the logic compatible input

signals. The output features two IGBT’s in a half-

bridge configuration. Propagation delays for the

high and low side power IGBT’s are matched to

simplify use. The device can operate up to 575 volts.

Product Summary

VIN (max)

PD (TA = 25°C)

VCE(ON) typ

Package

575V

3.0W

3.0V

7 Pin

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