IRF620 Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRF620 Datasheet PDF : 9 Pages
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IRF620, SiHF620
Vishay Siliconix
750
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
600
Crss = Cgd
Coss = Cds + Cgd
450
300
150
0
100
91027_05
Ciss
Coss
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
150 °C
100
25 °C
0.5
91027_07
VGS = 0 V
0.8
1.0
1.3
1.5
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 4.8 A
16
12
VDS = 160 V
VDS = 100 V
VDS = 40 V
8
4
0
0
91027_06
For test circuit
see figure 13
3
6
9
12
15
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
5
by RDS(on)
2
10 µs
10
100 µs
5
2
1 ms
1
5
2
0.1
0.1 2
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
5 12
5 10
2 5 102 2
5 103
91027_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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