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IRF6691

HEXFET Power MOSFET plus Schottky Diode

International Rectifier 

IRF6691

Static @ TJ = 25°C (unless otherwise specified)

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

IDSS

IGSS

gfs

Qg

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

RG

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Parameter

Min.

Drain-to-Source Breakdown Voltage 20

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

–––

Gate Threshold Voltage

1.6

Gate Threshold Voltage Coefficient –––

–––

Drain-to-Source Leakage Current

–––

–––

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

Forward Transconductance

110

Total Gate Charge

–––

Pre-Vth Gate-to-Source Charge

–––

Post-Vth Gate-to-Source Charge

–––

Gate-to-Drain Charge

–––

Gate Charge Overdrive

–––

Switch Charge (Qgs2 + Qgd)

–––

Output Charge

–––

Gate Resistance

–––

Turn-On Delay Time

–––

Rise Time

–––

Turn-Off Delay Time

–––

Fall Time

–––

Input Capacitance

–––

Output Capacitance

–––

Reverse Transfer Capacitance

–––

Typ.

–––

12

1.8

1.2

–––

-4.1

–––

–––

–––

–––

–––

–––

47

14

4.4

15

14

19

30

0.60

23

95

25

10

6580

2070

840

Max. Units

Conditions

–––

–––

2.5

1.8

2.5

–––

1.4

500

5

100

-100

–––

V VGS = 0V, ID = 1.0mA

mV/°C Reference to 25°C, ID = 10mA

e mΩ VGS = 4.5V, ID = 12A

e VGS = 10V, ID = 15A

V VDS = VGS, ID = 250µA

mV/°C ID = 10mA, reference to 25°C

mA VDS = 20V, VGS = 0V

µA VDS = 16V, VGS = 0V

mA VDS = 16V, VGS = 0V, TJ = 125°C

nA VGS = 12V

VGS = -12V

S VDS = 10V, ID = 26A

71

–––

VDS = 10V

––– nC VGS = 4.5V

–––

ID = 17A

–––

See Fig. 17

–––

––– nC VDS = 10V, VGS = 0V

1.5

–––

Ãe Ω

VDD = 16V, VGS = 4.5V

––– ns ID = 26A

–––

Clamped Inductive Load

–––

–––

VGS = 0V

––– pF VDS = 10V

–––

ƒ = 1.0MHz

Avalanche Characteristics

EAS

IAR

d Parameter

Single Pulse Avalanche Energy

Ù Avalanche Current

Typ.

–––

–––

Max.

230

26

Units

mJ

A

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 32

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

A showing the

––– ––– 260

integral reverse

G

––– ––– 0.65

p-n junction diode.

S

e V TJ = 25°C, IS = 25A, VGS = 0V

––– 32

––– 26

48

39

e ns TJ = 25°C, IF = 25A

nC di/dt = 100A/µs

2

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