IRF6691 Ver la hoja de datos (PDF) - International Rectifier

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IRF6691

HEXFET Power MOSFET plus Schottky Diode

International Rectifier 

IRF6691

+

‚

-



RG

D.U.T

+

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

ƒ

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer

-„ +

D.U.T. ISD Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

• dv/dt controlled by RG

• Driver same type as D.U.T.

VDD

+

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

* VGS = 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

* VGS=10V

VDD

ISD

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 16. Gate Charge Test Circuit

Id

Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd

Qgodr

Fig 17. Gate Charge Waveform

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