IRF6218S Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRF6218S

HEXFET® Power MOSFET

International Rectifier 

IRF6218S/L

1000

100

10

TOP

BOTTOM

VGS

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V

1

-4.5V

0.1

0.01

0.1

≤60µs PULSE WIDTH

Tj = 25°C

1

10

100

-V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

TOP

BOTTOM

VGS

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V

10

1

-4.5V

0.1

0.1

≤60µs PULSE WIDTH

Tj = 175°C

1

10

100

-V DS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25°C

TJ = 175°C

10

VDS = 50V

≤60µs PULSE WIDTH

1.0

2

4

6

8

10

12

-VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.5

ID = -27A

VGS = -10V

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

3

Share Link: