IRF6218S Ver la hoja de datos (PDF) - International Rectifier

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IRF6218S

HEXFET® Power MOSFET

International Rectifier 

IRF6218S/L

400

350

300

VGS = -10V

250

200

150

100

0

20

40

60

80

-ID , Drain Current (A)

Fig 12. On-Resistance vs. Drain Current

1000

900

800

700

600

500

400

300

200

100

0

4

ID = -27A

5 6 7 8 9 10 11 12

-VGS, Gate -to -Source Voltage (V)

Fig 13. On-Resistance vs. Gate Voltage

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-VGS

QGS

-

+VDS

VG

QG

QGD

VGS

-3mA

Charge

IG

ID

Current Sampling Resistors

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

VDS

L

I AS

RG

D.U.T

VDD

IAS

A

-20V

DRIVER

tp

0.01Ω

tp

V(BR)DSS

15V

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

6

900

ID

800

TOP -4.6A

700

-6.3A

BOTTOM -16A

600

500

400

300

200

100

0

25

50

75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 15c. Maximum Avalanche Energy

vs. Drain Current

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