IRF9Z24(2011) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRF9Z24 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9Z24, SiHF9Z24
Vishay Siliconix
VGS
Top - 15 V
- 10 V
- 8.0 V
- 7.0 V
101
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
- 4.5 V
20 µs Pulse Width
TC = 25 °C
10-1
100
101
91090_01
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
25 °C
175 °C
100
91090_03
20 µs Pulse Width
VDS = - 25 V
4
5
6
7
8
9
10
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
VGS
Top - 15 V
- 10 V
- 8.0 V
101
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
- 4.5 V
20 µs Pulse Width
TC = 175 °C
10-1
100
101
91090_02
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
3.0
ID = - 11 A
VGS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
91090_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91090
S11-0513-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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