IRF9Z24(2011) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Lista de partido

IRF9Z24
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

15

12

9

6

3

0

25

50

75 100 125 150 175

91090_09

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRF9Z24, SiHF9Z24

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

10

1 D = 0.50

0.2

0.1

PDM

0.05

0.1 0.02

0.01

10-2

10-5

Single Pulse

(Thermal Response)

10-4

10-3

10-2

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

0.1

1

10

91090_11

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91090

S11-0513-Rev. B, 21-Mar-11

www.vishay.com

5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: