IRFL214TRPBF(2014) Ver la hoja de datos (PDF) - Vishay Semiconductors

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IRFL214TRPBF
(Rev.:2014)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRFL214, SiHFL214

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

VDS

VGS

Rg

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S14-1685-Rev. E, 18-Aug-14

4

Document Number: 91194

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