IRFL214TRPBF(2014) Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Lista de partido

IRFL214TRPBF
(Rev.:2014)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

VDS

Vary tp to obtain

required IAS

Rg

10 V

tp

L

D.U.T.

IAS

0.01 Ω

+

- V DD

Fig. 12a - Unclamped Inductive Test Circuit

IRFL214, SiHFL214

Vishay Siliconix

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

VGS

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S14-1685-Rev. E, 18-Aug-14

5

Document Number: 91194

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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