IRG4BC30K-SPBF(2004) Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC30K-SPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT

International Rectifier 

IRG4BC30K-SPbF

6.0

5.0

4.0

Square wave:

3.0

60% of rated

voltage

2.0

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 9505°C°C

Gate drive as specified

Power Dissipation = 1.8W

Triangular wave:

Clamp voltage:

80% of rated

1.0

Ideal diodes

0.0

0.1

A

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

TJ = 25 oC

TJ = 150 oC

10

1

0.1

1

VGE = 15V

20µs PULSE WIDTH

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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100

TJ = 150 oC

10

TJ = 25 oC

1

0.1

5

VCC = 50V

5µs PULSE WIDTH

10

15

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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