IRG4BC30K-SPBF(2004) Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC30K-SPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT

International Rectifier 

1500

1200

900

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

600

300

0

1

Coes

Cres

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4BC30K-SPbF

20 VCC = 400V

I C = 16A

16

12

8

4

0

0

20

40

60

80

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

1.5 VCC = 480V

VGE = 15V

TJ = 25 ° C

IC = 16A

1.0

10 RG = O23hΩm

VGE = 15V

VCC = 480V

1

IC = 32A

IC = 16A

IC = 8.80AA

0.5

0

10

20

30

40

50

RG , Gate Resistance (OΩhm)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

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0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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