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IRG4PSH71K
International Rectifier
IRG4PSH71K Datasheet PDF : 8 Pages
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IRG4PSH71K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 ––– –––
V(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 ––– –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 1.1 –––
––– 2.97 3.9
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 10mA
IC = 42A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance
––– 3.44
––– 2.60
3.0 –––
––– -12
25 38
––– V
–––
IC = 78A
IC = 42A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 1.5mA
––– S VCE = 50V, IC = 42A
See Fig.2, 5
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µA VGE = 0V, VCE = 1200V
––– ––– 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
IGES
Gate-to-Emitter Leakage Current
––– ––– 5.0 mA VGE = 0V, VCE = 1200V, TJ = 150°C
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
— 410 610
IC = 42A
— 47 70 nC VCC = 400V
See Fig.8
Qgc
td(on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
— 145 220
— 45 —
VGE = 15V
tr
td(off)
tf
Eon
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
— 38 — ns TJ = 25°C
— 220 340
IC = 42A, VCC = 960V
— 160 250
VGE = 15V, RG = 5.0Ω
— 2.35 —
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
— 3.14 — mJ See Fig. 9,10,14
— 5.49 8.3
tsc
Short Circuit Withstand Time
10 — —
µs VCC = 720V, TJ = 125°C
VGE = 20V, RG = 5.0Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 42 —
— 41 —
— 460 —
— 250 —
TJ = 150°C
ns IC = 42A, VCC = 960V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
Ets
Total Switching Loss
LE
Internal Emitter Inductance
— 11.5 —
— 13 —
mJ See Fig. 10,11,14
nH Measured 5mm from package
Cies
Input Capacitance
Coes
Output Capacitance
— 5770 —
— 400 —
VGE = 0V
pF VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
— 100 —
ƒ = 1.0MHz
Pulse width ≤ 80µs; duty factor ≤ 0.1%
Pulse width 5.0µs, single shot
Repetitive rating; pulse width limited by maximum
junction temperature
2
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