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IRG4PSH71K

Short Circuit Rated UltraFast IGBT(INSULATED GATE BIPOLAR TRANSISTOR)

International Rectifier 

IRG4PSH71K

80

60

Square wave:

40

60% of rated

voltage

For both:

Duty cycle: 50%

TJ = 125°C

Tsink= 90°C

Gate drive as specified

Power Dissipation = 58W

Triangular wave:

Clamp voltage:

80% of rated

20

Ideal diodes

0

A

0.1

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

1000

100

TJ = 150 °C

10

TJ = 25 °C

VGE = 15V

80µs PULSE WIDTH

1

1.0

2.0

3.0

4.0

5.0

VCE, Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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100

TJ = 150 °C

10

TJ = 25 °C

VCC = 50V

5µs PULSE WIDTH

1

5

6

7

8

9

10

11

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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