IRG4PSH71UD Ver la hoja de datos (PDF) - International Rectifier
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IRG4PSH71UD
International Rectifier
IRG4PSH71UD Datasheet PDF : 10 Pages
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IRG4PSH71UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
eà Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
1200 — — V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
19 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.78 — V/°C VGE = 0V, IC = 1mA
— 2.52 2.70 V IC = 70A
VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 3.17 —
IC = 140A
See Fig.2, 5
— 2.68 —
IC = 70A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
gfe
f Forward Transconductance
— -9.2 — mV/°C VCE = VGE, IC = 1.0mA
48 72 — S VCE = 100V, IC = 70A
ICES
Zero Gate Voltage Collector Current
— — 500 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
VFM
Diode Forward Voltage Drop
— 2.92 3.9 V IF = 70A See Fig.13
— 2.88 3.7
IF = 70A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Qg
Total Gate Charge (turn-on)
— 380 570
IC = 70A
Qge
Gate-to-Emitter Charge (turn-on)
— 61 24 nC VCC = 400V
See Fig.8
Qgc
Gate-to-Collector Charge (turn-on)
— 130 200
VGE = 15V
td(on)
Turn-On delay time
— 46 —
IC = 70A, VCC = 960V
tr
Rise time
— 77 — ns VGE = 15V, RG = 5.0Ω
td(off)
Turn-Off delay time
— 250 350
Energy losses include "tail"
tf
Fall time
— 220 330
See Fig. 9, 10, 11, 14
Eon
Turn-On Switching Loss
— 8.8 —
Eoff
Turn-Off Switching Loss
— 9.4 — mJ
Etot
Total Switching Loss
— 18.2 19.7
td(on)
Turn-On delay time
— 43 —
TJ = 150°C, See Fig. 9, 10, 11, 14
tr
Rise time
— 78 — ns IC = 70A, VCC = 960V
td(off)
Turn-Off delay time
— 330 —
VGE = 15V, RG = 5.0Ω
tf
Fall time
— 480 —
Energy losses include "tail"
ETS
Total Switching Loss
— 26 — mJ
LE
Internal Emitter Inductance
— 13 — nH Measured 5mm from package
Cies
Input Capacitance
— 6640 —
VGE = 0V
Coes
Output Capacitance
— 420 — pF VCC = 30V, See Fig.7
Cres
Reverse Transfer Capacitance
— 60 —
f = 1.0MHz
trr
Diode Reverse Recovery Time
— 110 170 ns TJ=25°C
See Fig
— 180 270
TJ=125°C
14
IF = 70A
Irr
Diode Peak Reverse Recovery Current
— 6.0 9.0 A TJ=25°C
See Fig
— 8.9 13
TJ=125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
— 350 530 nC TJ=25°C
See Fig
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
— 870 1300
TJ=125°C
— 150 230 A/µs TJ=25°C
16
See Fig
di/dt = 200A/µs
During tb
2
— 130 200
TJ=125°C
17
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