IRG4PSH71UD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PSH71UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PSH71UD

40

30

20

Square wave:

60% of rated

voltage

10

Ideal diodes

Duty cycle : 50%

Tj = 125°C

Tsink = 90°C

Gate drive as specified

Turn-on losses include

effects of

reverse recovery

Power Dissipation = 58W

0

0.1

1

10

100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

100

TJ = 150°C

10

TJ = 25°C

1

VGE= 15V

< 60µs PULSE WIDTH

0.1

0

1

2

3

4

5

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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1000.0

100.0

10.0

TJ = 150°C

1.0

0.1

4

TJ = 25°C

VCC = 50V

< 60µs PULSE WIDTH

6

8

10

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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