GP50B60PD1 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
GP50B60PD1 Datasheet PDF : 11 Pages
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IRGP50B60PD1
1000
1000
900
800
EON
700
600
EOFF
500
400
300
0
5
10
15
20
25
RG (Ω)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
40
tdOFF
100
tdON
tF
tR
10
0
5
10
15
20
25
RG (Ω)
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
30
1000
Coes
20
100
10
Cres
0
0 100 200 300 400 500 600 700
VCE (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
16
14
12
400V
10
8
6
4
2
0
0
50
100 150 200 250
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 33A
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10
0
20
40
60
80
100
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1.4
1.2
1.0
0.8
-50
0
50
100 150 200
TJ (°C)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
5
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