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GP50B60PD1

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRGP50B60PD1

1

D = 0.50

0.1

0.20

0.10

0.05

0.01

0.01

0.02

0.001

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τCτ

τ2 τ2

Ri (°C/W) τi (sec)

0.157 0.000346

0.163 4.28

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1 D = 0.50

0.20

0.10

0.1

0.05

0.01

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci τi/Ri

R2R2

τ2 τ2

R3R3 Ri (°C/W) τi (sec)

τCτ 0.363 0.000112

τ3 τ3

0.864 0.001184

0.473 0.032264

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

1000

100

10

100µsec

1

0.1

Tc = 25°C

Tj = 150°C

Single Pulse

0.01

1

10

1msec

10msec

100

1000 10000

VCE , Collector-to-Emitter Voltage (V)

Fig. 25 - Forward SOA, TC = 25°C; TJ ≤ 150°C

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