IRHN7250SE Ver la hoja de datos (PDF) - International Rectifier
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IRHN7250SE Datasheet PDF : 8 Pages
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Pre-Irradiation
IRHN7250SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
Diode Forward Voltage
100K Rads (Si)
Min
Max
200
—
2.0
4.5
—
100
—
-100
—
25
—
0.10
—
0.10
—
1.9
Units
V
nA
µA
Ω
Ω
V
Test Conditions
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 160V, VGS=0V
VGS = 12V, ID = 16A
VGS = 12V, ID = 16A
VGS = 0V, ID = 26A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
Cu
28
Br
36.8
Energy
(MeV)
285
305
Range
(µm) @VGS=0V
43
200
39
200
@VGS=-5V
200
200
VDS (V)
@VGS=-10V
200
200
@VGS=-15V
200
180
@VGS=-20V
200
140
250
200
150
Cu
100
Br
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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