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IRHN7250SE

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)

International Rectifier 

Pre-Irradiation

IRHN7250SE

6000

5000

4000

3000

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

 Ciss

2000

1000

C oss

C rss

0

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20  ID = 26A

16

12

8

 VDS = 160V

VDS = 100V

VDS = 40V

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80

120

160

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

 TJ = 150° C

10

 TJ = 25 ° C

 VGS = 0 V

1

0.4

0.8

1.2

1.6

2.0

2.4

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

1000

 OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

 10us

 100us

10

 1ms

 TC = 25°C

TJ = 150° C

Single Pulse

1

1

10

 10ms

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

5

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