IRL630PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRL630PBF Datasheet PDF : 8 Pages
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IRL630, SiHL630
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 10
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 5.0 V
ID = 5.4 Ab
VGS = 4.0 V
ID = 4.5 Ab
VDS = 50 V, ID = 5.4 Ab
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
200
-
-
V
-
0.27
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.40
Ω
-
-
0.50
4.8
-
-
S
-
1100
-
-
220
-
pF
-
70
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
40
ID = 9.0 A, VDS = 160 V,
Qgs
VGS = 10 V
see fig. 6 and 13b
-
-
5.5
nC
Qgd
-
-
24
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 100 V, ID = 9.0 A
rG = 6.0 Ω, rD = 11 Ω, see fig. 10b
-
8.0
-
-
57
-
ns
-
38
-
-
33
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
D
6 mm (0.25") from
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
9.0
A
-
-
36
Body Diode Voltage
VSD
TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 9.0 A, dI/dt = 100 A/µsb
230
350
ns
Qrr
-
1.7
2.6
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91303
S-Pending-Rev. A, 17-Jul-08
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