IRL630PBF Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Lista de partido

IRL630PBF

POWER MOSFET

Vishay Semiconductors 

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRL630, SiHL630

Vishay Siliconix

VDS

VGS

rG

rD

D.U.T.

+- VDD

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

rG

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- VDD

A

Fig. 12a - Unclamped Inductive Test Circuit

Document Number: 91303

S-Pending-Rev. A, 17-Jul-08

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

www.vishay.com

5

Share Link: