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IRS2003STRPBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
IRS2003STRPBF
IR
International Rectifier IR
IRS2003STRPBF Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Sheet No. PD60269
IRS2003(S)PbF
Features
Floating channel designed for bootstrap operation
Fully operational to +200 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout
3.3 V, 5 V, and 15 V logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set deadtime
High-side output in phase with HIN input
Low-side output out of phase with LIN input
RoHS compliant
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
200 V max.
IO+/-
130 mA/270 mA
VOUT
10 V - 20 V
ton/off (typ.)
680 ns/150 ns
Deadtime (typ.)
520 ns
Packages
Description
The IRS2003 is a high voltage, high speed power
MOSFET and IGBT drivers with dependent high- and
low-side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
8-Lead PDIP
IRS2003
8-Lead SOIC
IRS2003S
compatible with standard CMOS or LSTTL output, down
to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side
configuration which operates up to 200 V.
Typical Connection
up to 200 V
VCC
VCC
VB
HIN
HIN
HO
LIN
LIN
VS
COM
LO
TO
LOAD
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only. Please refer to
our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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