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IS41C16257-35K

256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Integrated Silicon Solution 

IS41C16257

IS41LV16257

ISSI ®

AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless

otherwise noted.)

Symbol

tACH

tOEH

tDS

tDH

tRWC

tRWD

tCWD

tAWD

tPC

tRASP

tCPA

tPRWC

tOFF

tWHZ

tCLCH

tCSR

tCHR

tORD

tREF

tT

Parameter

Column-Address Setup Time to CAS

Precharge during WRITE Cycle

OE Hold Time from WE during

READ-MODIFY-WRITE cycle(18)

Data-In Setup Time(15, 22)

Data-In Hold Time(15, 22)

READ-MODIFY-WRITE Cycle Time

RAS to WE Delay Time during

READ-MODIFY-WRITE Cycle(14)

CAS to WE Delay Time(14, 20)

Column-Address to WE Delay Time(14)

Fast Page Mode READ or WRITE

Cycle Time(24)

RAS Pulse Width

Access Time from CAS Precharge(15)

READ-WRITE Cycle Time(24)

Output Buffer Turn-Off Delay from

CAS RAS or

(13,15,19, 29)

Output Disable Delay from WE

Last CAS going LOW to First CAS

returning HIGH(23)

CAS Setup Time (CBR REFRESH)(30, 20)

CAS Hold Time (CBR REFRESH)(30, 21)

OE Setup Time prior to RAS during

HIDDEN REFRESH Cycle

Refresh Period (512 Cycles)

Transition Time (Rise or Fall)(2, 3)

-35

Min. Max.

15 —

-60

Min. Max.

15 —

Units

ns

8—

15 —

ns

0—

0—

ns

6—

10 —

ns

80 — 140 —

ns

45 —

80 —

ns

25 —

36 —

ns

30 —

49 —

ns

12 —

25 —

ns

35 100K 60 100K ns

— 21

— 34

ns

40 —

56 —

ns

3 15

3 15

ns

3 15

3 15

ns

10 —

10 —

ns

8—

10 —

ns

8—

10 —

ns

0—

0—

ns

—8

—8

ms

1 50

1 50

ns

8

Integrated Silicon Solution, Inc. — 1-800-379-4774

DR004-1B

05/24/99

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