IS61LV2568L-10KI(2005) Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS61LV2568L-10KI
(Rev.:2005)

256K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61LV2568L

TRUTH TABLE

Mode

Not Selected

(Power-down)

Output Disabled

Read

Write

WE CE OE

X

H

X

H

L

H

H

L

L

L

L

X

I/O Operation

High-Z

High-Z

DOUT

DIN

ISSI ®

VDD Current

ISB1, ISB2

ICC

ICC

ICC

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

VDD

VTERM

TSTG

PD

Parameter

Supply voltage with Respect to GND

Terminal Voltage with Respect to GND

Storage Temperature

Power Dissipation

Value

Unit

–0.5 to +4.0

V

–0.5 to VDD + 0.5

V

–65 to +150

°C

1.0

W

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VDD (8ns)

3.3V +10%,-5%

VDD (10 ns)

3.3V + 10%

3.3V + 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage(1)

VIL

Input LOW Voltage(1)

ILI

Input Leakage

ILO

Output Leakage

Test Conditions

VDD = Min., IOH = –4.0 mA

VDD = Min., IOL = 8.0 mA

GND ≤ VIN ≤ VDD

GND ≤ VOUT ≤ VDD, Outputs Disabled

Note:

1. VIL(min) = –0.3V (DC); VIL(min) = –2.0V (pulse width - 2.0 ns).

VIH(max) = VDD + 0.3V (DC); VIH(max) = VDD + 2.0V (pulse width - 2.0 ns).

Min.

Max.

Unit

2.4

—

V

—

0.4

V

2.0 VDD + 0.3

V

–0.3

0.8

V

–1

1

µA

–1

1

µA

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. C

07/25/05

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