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IS62WV25616ALL

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

Integrated Silicon Solution 

IS62WV25616ALL, IS62WV25616BLL

CAPACITANCE(1)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Input/Output Capacitance

VOUT = 0V

10

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

IS62WV25616ALL

(Unit)

0.4V to VDD-0.2V

5 ns

VREF

See Figures 1 and 2

IS62WV25616BLL

(Unit)

0.4V to VDD-0.3V

5ns

VREF

See Figures 1 and 2

ISSI ®

R1(Ω)

R2(Ω)

VREF

VTM

IS62WV25616ALL

1.65V-2.2V

3070

3150

0.9V

1.8V

IS62WV25616BLL

2.5V - 3.6V

3070

3150

1.5V

2.8V

AC TEST LOADS

R1

VTM

OUTPUT

Figure 1

30 pF

R2

Including

jig and

scope

R1

VTM

OUTPUT

5 pF

R2

Including

jig and

scope

Figure 2

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. C

05/02/05

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