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IS62WV25616ALL

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

Integrated Silicon Solution 

IS62WV25616ALL, IS62WV25616BLL

ISSI ®

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

Symbol

Parameter

55 ns

Min. Max.

70 ns

Min. Max.

Unit

tRC

Read Cycle Time

55

—

70

—

ns

tAA

Address Access Time

—

55

—

70

ns

tOHA

Output Hold Time

10

—

10

—

ns

tACS1

CS1 Access Time

—

55

—

70

ns

tDOE

OE Access Time

—

25

—

35

ns

tHZOE(2)

OE to High-Z Output

—

20

—

25

ns

tLZOE(2)

OE to Low-Z Output

5

—

5

—

ns

tHZCS1

CS1 to High-Z Output

0

20

0

25

ns

tLZCS1

CS1 to Low-Z Output

10

—

10

—

ns

tBA

LB, UB Access Time

—

55

—

70

ns

tHZB

LB, UB to High-Z Output

0

20

0

25

ns

tLZB

LB, UB to Low-Z Output

0

—

0

—

ns

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to

VDD-0.2V/VDD-0.3V and output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

6

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. C

05/02/05

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