K4E641612D Ver la hoja de datos (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

LOWER BYTE READ CYCLE

N O T E : D IN = O P E N

CMOS DRAM

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

A

V IL -

V IH -

W

V IL -

V IH -

OE

V IL -

DQ0 ~ DQ7

V OH -

V OL -

DQ8 ~ DQ15

V OH -

V OL -

tRAS

tRC

tC R P

tC R P

tRCD

tASR

tR A D

tRAH

tASC

ROW

ADDRESS

tRCS

tCSH

tR S H

tC A S

tC A H

COLUMN

ADDRESS

tR A L

tAA

tRAC

OPEN

tOEA

tCAC

t CLZ

tO L Z

OPEN

tRP

tR P C

tR R H

tRCH

tC E Z

tO E Z

DATA-OUT

D o n ′t c a r e

Undefined

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