K4E641612D Ver la hoja de datos (PDF) - Samsung

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K4E641612D

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E661612D,K4E641612D

UPPER-BYTE READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

VIH -

OE

VIL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

VI/OH -

VI/OL -

tRAS

tRWC

tCRP

tRCD

tCRP

tRSH

tCAS

tRAD

tASR tRAH

ROW

ADDR

tASC tCAH

COLUMN

ADDRESS

tCSH

tAWD

tCWD

tRWD

tOEA

tRP

tRPC

tR W L

tC W L

tW P

tOLZ

tCLZ

tCAC

tA A

tR A C

OPEN

tOED

tO E Z

VALID

DATA-OUT

tD S tDH

VALID

DATA-IN

Don′t care

Undefined

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