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T15V2M16B-55S

128K X 16 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

RECOMMENDED OPERATING CONDITIONS

- (Ta = -10 ~ +70 °C / -40°C ~ 85°C)

PARAMETER

Supply Voltage

Input Voltage

SYM

Vcc

VSS

VIH

VIL

MIN

2.7

0.0

0.7Vcc

-0.2

TYP

3.0

0.0

-

-

T15V2M16B

MAX

3.6

0.0

Vcc+0.3

0.6

UNIT

V

V

V

V

OPERATING CHARACTERISTICS

- (Vcc = 2.7 to 3.6V, VSS = 0V, Ta = -10 ~ +70 °C / -40°C ~ 85°C)

PARAMETER SYM. TEST CONDITIONS

Input Leakage

Current

ILI

Vcc = Max,

VIN = VSS to Vcc

Output Leakage

Current

CE= VIH or OE = VIH

ILO or WE = VIL

VIO = VSS to Vcc

CE = VIL,

Operating Power

Supply Current

ICC

WE =VIH, OE = VIH ,

VIN = VIH or VIL,

IOUT=0mA

ICC1

Average Operating

Current

ICC2

Standby Power

Supply Current ISB

(TTL Level)

Standby Power

Supply Current ISB1

(CMOS Level)

Output Low Voltage VOL

Output High Voltage VOH

Cycle time=1us,

100% duty, IIO=0mA,

CE ≤ 0.2V,

VIN ≥ VCC-0.2V

or VIN ≤ 0.2V

Cycle time=min,

100% duty, IIO=0mA,

CE = VIL,

VIN = VIH or VIL

CE =VIH or

LB = UB =VIH

other input= VIL or VIH

CE ≥ Vcc-0.2V or

LB = UB ≥Vcc-0.2V,

VIN ≤ 0.2V or

VIN ≥ Vcc-0.2V

IOL = 2.1mA

IOH = -1.0 mA

-45

-55

-70

-100 UNIT

Min Max Min Max Min Max Min Max

- 1 - 1 - 1 - 1 uA

- 1 - 1 - 1 - 1 uA

- 3 - 3 - 3 - 3 mA

- 5 - 5 - 5 - 5 mA

- 45 - 40 - 35 - 25 mA

- 0.3 - 0.3 - 0.3 - 0.3 mA

- 40 - 15 - 15 - 15 uA

- 0.4 - 0.4 - 0.4 - 0.4 V

2.2 - 2.2 - 2.2 - 2.2 - V

TM Technology Inc. reserves the right

P. 4

to change products or specifications without notice.

Publication Date: NOV. 2002

Revision:A

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