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MAX8550
(Rev.:2004)

Integrated DDR Power-Supply Solutions for Desktops, Notebooks, and Graphic Cards

Maxim Integrated 

Integrated DDR Power-Supply Solutions for

Desktops, Notebooks, and Graphic Cards

ELECTRICAL CHARACTERISTICS (continued)

(VIN = +15V, VDD = AVDD = VSHDNA = VSHDNB = VBST = VILIM = 5V, VOUT = VREFIN = VVTTI = 2.5V, UVP/OVP = STBY = FB = SKIP

= GND, PGND1 = PGND2 = LX = GND, TON = OPEN, VVTTS = VVTT, TA = -40°C to +85°C, unless otherwise noted. Typical values

are at TA = +25°C.) (Note 1)

PARAMETER

REFERENCE

Reference Voltage

Reference Load Regulation

REF Undervoltage Lockout

FAULT DETECTION

OVP Trip Threshold

(Referred to Nominal VOUT)

UVP Trip Threshold

(Referred to Nominal VOUT)

POK1 Trip Threshold

(Referred to Nominal VOUT)

SYMBOL

CONDITIONS

VREF

AVDD = 4.5V to 5.5V; IREF = 0

IREF = 0 to 50µA

VREF rising

Hysteresis

UVP/OVP = AVDD (Note 4)

Lower level, falling edge, 1% hysteresis

Upper level, rising edge, 1% hysteresis

MIN TYP MAX UNITS

1.98

2

2.02

V

0.01

V

1.93

V

300

mV

112

116

120

%

65

70

75

%

87

90

93

%

107

110

113

POK2 Trip Threshold

(Referred to Nominal VVTTS

and VVTTR)

UVP Blanking Time

OVP, UVP, POK_ Propagation

Delay

POK_ Output Low Voltage

POK_ Leakage Current

ILIM Adjustment Range

ILIM Input Leakage Current

Current-Limit Threshold (Fixed)

PGND1 to LX

VILIM

Lower level, falling edge, 1% hysteresis

Upper level, rising edge, 1% hysteresis

From rising edge of SHDNA

OVP not applicable in MAX8551

ISINK = 4mA

VPOK_ = 5.5V, VFB = 0.8V, VVTTS = 1.3V

87.5

90

92.5

%

107.5 110 112.5

10

20

40

ms

10

µs

0.3

V

1

µA

0.25

2.00

V

0.1

µA

45

50

55

mV

Current-Limit Threshold

(Adjustable) PGND1 to LX

VILIM = 2V

170

200

235

mV

Current-Limit Threshold (Negative

Direction) PGND1 to LX

SKIP = AVDD (Note 4)

-75

-60

-45

mV

Current-Limit Threshold (Negative

Direction) PGND1 to LX

SKIP = AVDD, VILIM = 2V (Note 4)

-250

mV

Zero-Crossing Detection

Threshold PGND1 to LX

Thermal-Shutdown Threshold

Thermal-Shutdown Hysteresis

3

mV

+160

°C

15

°C

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